Kt3102 pinout color marking. Transistor KT3102: parameters and analogs, socle

One of the most famous transistors is KT315, the analogue of which did not soon appear in the open spaces of the Soviet Union, and which was the first mass Soviet transistor. It is so versatile that it continues to be used until now (although it is rather limited and for the most part radio amateurs). The prerequisite for this was their versatility, a long time of operation and the presence of vast experience in creating something with their help (which can be found in special sources).

Development

The idea of ​​mass production of Soviet engineers caught fire in 1966. The transistor was developed in 1967 by the Fryazinsky semiconductor plant in its research and development bureau. And in 1968, the first units went down.

What makes it stand out among other transistors

First of all, they paid attention to its appearance and characteristics. The frequency bar was 250 MHz, which as of 1967 was very, very much. Also, the ease of production led to the release of a huge number of transistors. There was something unique in it (at that time) in terms of grounding the power supply minus pole.

Technology that underlies the transistor

Planar technology was used for production (it was envisaged that all structures are created on one side, the conductivity of the material - as in collectors, therefore, first using the base region is formed, and then in it - the emitter region). The parameters that were obtained by him, made him the best in the world (at the time of creation). He allowed to replace many other parts in electronics, while it was cheap. It got to the point that in the Soviet Union in stores for radio amateurs it was sold by weight.

KT315 - domestic and foreign analogues

But since the main topic of the article is not KT315, the analogs for this transistor, one should already pay attention to the main topic. So, here is a list of analogues:

1. Bipolar transistor BC847B. Relatively expensive (3 rubles per item) low-power transistor having a significant gain. Compared to KT315, the analogue overseas is quite expensive. But it has the advantage that when soldering and re-soldering it does not fail so quickly (which is not least due to its increased and reinforced structure). Maximum power dissipation - 0.25. In the direction of the "collector-base" can move up to 50 volts. Per collector-emitter - up to 45 volts. The maximum voltage for the direction of the emitter-base is 6 volts. The collector junction has a capacity of 8. The maximum junction temperature is 150 degrees. Statistical current transfer coefficient - 200.
2. Bipolar transistor 2SC634. This import analogue KT315 is quite balanced in terms of features and price. The maximum power dissipation is 0.18. The maximum allowable voltage on the collector base and collector-emitter is 40 volts. Emitter base - only 6 volts. The capacity of the collector junction is 8. The maximum transition temperature is 125 degrees. Static current transfer ratio - 90.
3. Bipolar transistor KT3102. To say that it is for the KT315 - the analogue of the domestic will be wrong, because historically it happened so that similar parts were made of one type that meets all the necessary requirements and can fulfill the functions assigned to it. The fact is that simply KT3102 does not exist, one more letter is surely following. To avoid conflicts, values ​​will be indicated for the whole group. More detailed information you can get by looking through each transistor. Domestic development is an improved KT315. The analogue in this case is the word not quite relevant, rather, an improved mechanism. The maximum power dissipation KT3102 is 0.25. The maximum voltage of 20-50 volts can be applied to the collector base. The maximum voltage that can be applied to the collector-emitter is also 20-50 volts. The maximum voltage on the emitter base is 5 volts. The capacity of the collector junction is 6. The maximum transition temperature is 150 degrees. The static current transfer ratio is 100.
4. Bipolar transistor 2SC641. Maximum power dissipation - 0.1. The voltage on the collector direction - the base should not exceed 40 volts. The maximum voltage on the direction of the collector - emitter should not be more than 15 volts. For the direction of the emitter - base this value should not exceed 5 volts. The capacity of the collector junction is 6 units. The maximum transition temperature is 125 degrees. The static current transfer ratio is 35.

Where do they apply

KT315, analogs (foreign and domestic) were used and are now used by radio amateurs when creating high, medium and low frequency amplifiers. They can also be applied in generators, signal converters and logic circuits. If you strain your brains, you can find another use, but this is the main purpose for KT315. Parameters analog (any) has a little different. But the main thing is that these are bipolar transistors, and their power is important exclusively for the power of the circuits that will be collected.

Conclusion

The article considered a prototype (КТ315) and its analogues with a description of the possibilities of their use. It is hoped that the information provided here will be useful to you. It is also necessary to remind that transistors are quite fragile elements, which, moreover, often burn out. Therefore, when working with them, and with other parts of electrical engineering, observe safety precautions.

The list and number of precious metals that can be extracted from the transistor KT3102BM.

Information from the directories of manufacturers. Reference book of the content of precious metals (gold, silver, platinum and PGM) in a transistor, indicating its weight that is used (or used) in production in radio engineering.

Transistor (English transistor), semiconductor triode   - a radio-electronic component of a semiconductor material, usually with three pins, allowing the input signal to control the current in the electrical circuit. Commonly used to amplify, generate, and convert electrical signals. In general, a transistor is any device that imitates the main property of a transistor — a change in the signal between two different states as the signal on the control electrode changes.

In field and bipolar transistors, the current in the output circuit is controlled by changing the input voltage or current. A small change in input values ​​can lead to a significantly larger change in output voltage and current. This amplifying property of transistors is used in analog technology (analog TV, radio, communication, etc.). Currently, analogue technology is dominated by bipolar transistors (BT) (an international term - BJT, bipolar junction transistor). Another important branch of electronics is digital technology (logic, memory, processors, computers, digital communications, etc.), where, on the contrary, bipolar transistors are almost completely superseded by field-effect transistors.

Now let's talk about field effect transistors. What can be assumed already by their name alone? First, since they are transistors, they can somehow control the output current. Secondly, they are supposed to have three contacts. And thirdly, at the heart of their work is the pn transition. What will official sources tell us?

Field-effect transistors are active semiconductor devices, usually with three pins, in which the output current is controlled by an electric field.

The definition not only confirmed our assumptions, but also demonstrated the feature of field-effect transistors — the output current is controlled by changing the applied electric field, i.e. voltage. But in bipolar transistors, as we remember, the output current is controlled by the input base current.

One more fact about field effect transistors can be found by drawing attention to their different name - unipolar. This means that only one type of charge carrier (or electrons, or holes) is involved in the flow of current.

The three contacts of field-effect transistors are called the source (source of current carriers), the gate (control electrode), and drain (the electrode where the carriers flow). The structure seems simple and very similar to a bipolar transistor device. But it can be implemented in at least two ways. Therefore, field-effect transistors are distinguished with a control p-n junction and with an isolated gate.

Transistor circuit and transistor turn on circuit.

Any amplifier, regardless of frequency, contains from one to several stages of amplification. In order to have an idea of ​​the circuit design of transistor amplifiers, we consider in more detail their schematic diagrams.

Transistor cascades, depending on the options for connecting transistors, are divided into:

1 Cascade with a common emitter (the diagram shows a cascade with a fixed base current - this is one type of transistor bias).
  2 Cascade with a common collector
  3 Cascade with a common base

Transistor Parameters
  UKBO - the maximum allowable voltage collector - base;
  UKBO and - the maximum allowable impulse voltage collector - base;
  UCEO - the maximum allowable voltage collector - emitter;
  UKEO and - the maximum allowable pulse voltage collector-emitter;
  UKEN - saturation voltage collector - emitter;
  USI max - the maximum allowable voltage drain - source;
  USIO - drain voltage - source with a broken gate;
  UЗИ max - the maximum allowable voltage gate - source;
  UZI ots - transistor cut-off voltage at which the drain current reaches a predetermined low value (for field-effect transistors with a pn junction, and with an insulated gate);
  UZI pores - The threshold voltage of the transistor between the gate and the drain, at which the drain current reaches a predetermined low value (for field-effect transistors with an insulated gate and n-channel);
  IK max - the maximum allowable DC collector current;
  IK max and - the maximum allowable pulse current collector;
  IC max - the maximum allowable direct current drain;
  IC beg - initial drain current;
  IC OST - residual drain current;
  IКБО - reverse current collector;
  RK max - the maximum permissible constant power dissipation of the collector without heat sink;
  RK max t - the maximum permissible constant power dissipation of the collector with a heat sink;
  RSI max - the maximum permissible constant power dissipation drain - source;
  H21E is the static current transfer ratio of a bipolar transistor in a common emitter circuit;
  RCI open - drain - source in the open state;
  S is the slope;
  fGR - cutoff frequency of current transfer ratio in the circuit with a common emitter;
  KSH - noise ratio of a bipolar (field) transistor;

Wiring Transistor

To be included in the circuit, the transistor must have four outputs - two input and two output. But transistors of all varieties have only three leads. To turn on a three-terminal device, one of the conclusions needs to be combined, and since there can only be three such combinations, there are three basic switching transistors:
  Bipolar Transistor Circuit

with common emitter (OE) - performs amplification both in current and voltage - the most frequently used scheme;
with common collector (OK) - performs current-only amplification — used to match high-impedance signal sources with low-resistance load resistances;
  with a common base (ON) - amplification by voltage alone, due to its shortcomings, is rarely used in single-transistor amplification stages (mainly in microwave amplifiers), usually in composite circuits (for example, cascode).

Circuit switching of the field-effect transistor

  Field-effect transistors, both with p-n junction (channel) and MOS (MIS) have the following switching schemes:

with common source (OI) - analogue of the OE bipolar transistor;
  with a common drain (OS) - an analogue of the OK of the bipolar transistor;
  with common gate (OZ) is an analogue of OB of bipolar transistor.

Open collector circuits (drain)

“Open collector (drain)” refers to switching on a transistor according to a common emitter (source) circuit as part of an electronic module or chip, when the collector (drain) output is not connected to other elements of the module (chip), but is directly output to the module (or chip output). The choice of the load of the transistor and the collector current (drain) is left to the developer of the final circuit, which includes a module or a chip. In particular, the load of such a transistor can be connected to a power source with a higher or lower voltage than the supply voltage of the module / chip. This approach greatly expands the scope of applicability of the module or chip due to the slight complication of the final circuit. Open collector (drain) transistors are used in TTL logic elements, microcircuits with powerful key output stages, level converters, bus drivers (drivers), etc.

The reverse inclusion is rarely used - with an open emitter (source). It also allows you to select the load of the transistor after manufacturing the main circuit, supply the emitter / drain voltage of a polarity opposite to the main circuit supply voltage (for example, negative voltage for circuits with npn or N-channel field effect bipolar transistors), etc.

Marking of transistors - Color and code marking of transistors.

Code marking the release date of devices
  Year Coded designation
  1983 R
  1984 S
  1985 T
  1986 U
  1987 V
  1988 W
  1989 X
  1990 A
  1991 V
  1992 C
  1993 D
  1994 E
  1995 F
  1996 H
  1997 J
  1998 K
  1999 L
  2000 N

Month Coded Designation
  January 1
  February 2
  March 3
  April 4
  May 5
  June 6
  July 7
  August 8
  September 9
  October 0
  November N
December D

Group color coding
  Group Colored dot on top
  A dark red
  B Yellow
  In Dark Green
  G Blue
  D Blue
  E White
  F Dark brown
  And silver
  To Orange
  L Light Tobacco
  M Gray

Pinout transistors

When selecting analogs of parts according to the diagrams, there always arises the question of their proper installation on a printed circuit board. Pinout (pinout) of transistors. Right now I want to describe and lay out the pinouts (pinouts) of all domestic transistors on one page so that you won’t be misled by the location of the transistor legs.

Transistors Reference - Transistor Cases

transistors Reference - Transistor Cases

Transistor working principle

Currently, transistors of two types are used - bipolar and field. Bipolar transistors appeared first and became most prevalent. Therefore, they are usually called simply transistors. Field-effect transistors appeared later and while less bipolar are used.

Bipolar transistors are called because the electric current in them is formed by electric charges of positive and negative polarity. Positive charge carriers are called holes, negative charges are transferred by electrons. A bipolar transistor uses a crystal of germanium or silicon - the main semiconductor materials used for the manufacture of transistors and diodes. Therefore, the transistors are called some silicon, others - germanium. Both types of bipolar transistors have their own characteristics, which are usually taken into account when designing devices.

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Transistor - a semiconductor element of an electrical circuit, controlled by the input signal. As a signal it can be used as a usual electric current, but also, for example, the light in the operation of a phototransistor.

KT3102 transistor - This is the most popular Soviet bipolar transistor, which has been used and is used to this day in the circuits of various signal amplifiers: operational amplifiers, differential and ULF (low frequency amplifier). KT3102, due to the small thickness of the base, amplified the current signal thousands of times. It is made of silicon, most often by the method of epitaxy (build-up on new semiconductor layers on a silicon substrate).

The KT3102 transistor was originally often made in a metal cylindrical case, familiar to many Soviet transistors. At the moment, it is made in a plastic case. Is a complementary pair for KT3107.

The principle of operation of the device is to control the current by changing the voltage. To element began to work, you need to attach a voltage to it. Then the device will open. By changing the voltage of the base, we manage the entire element.

There is a fairly large number of different variants of this device, differing from each other in one way or another indicators. To consider all the options of the device, we introduce the following parameters KT3102:

The above characteristics of KT3102 are the same for all models of the device. That is, for any labeling of the device, you must take into account the above values. The indicators described below will vary depending on the type of item. In the following we give a brief summary of the parameters for each type.

• U KB - the maximum potential difference of the collector-base system.
• U CE - the maximum potential difference of the collector-emitter system.
• H 21e - gain when connected with a common emitter.
• I KB - reverse current collector.
• K W - noise factor.

For convenience, all indicators will be in the table. The letter M and its absence in the designation of a pair of transistors (for example, KT3102A and KT3102AM) indicates the type of case. With the letter M - plastic case. Without it - metal. The figures do not depend on the type of case. In the table, foreign analogs of KT3102 will also be given.

Marking and socle

This device has the structure n - p - n . The elements of the element from left to right, when the front of the transistor is addressed to us (flat side with marking), have this order - “collector-base-emitter”. The pin of KT3102 needs to be known and taken into account when soldering the device. A soldering error can damage the entire transistor.

Transistor marking is used to distinguish one type of device from another. For example, the differences between type A and B. In the case of KT3102, marking has the following structure:

• The green circle on the front side indicates the type of transistor. In our case - KT3102.
• The circle above means the letter of the device (A, B, C, etc.). The following notation is used:

A - red or burgundy. B - yellow. B - green. G - blue. D - blue. E - white. F - dark brown.

On some devices, instead of color notation, the marking is written in words. For example, 3102 EM. Similar designations are more convenient than color.

Knowledge of the transistor marking will allow you to choose the right element, according to the required parameters.

Foreign analogues of KT3102

For replacement of KT 3102   There is a very large number of foreign analogs of KT 3102. Analog can be absolutely identical to the original, for example, KT3102 can be safely replaced by 2 SA 2785. This replacement of KT 3102 will have absolutely no effect on the operation of a particular circuit, since transistors have the same performance. There are also non-identical counterparts that differ slightly in performance, but their use is still possible in some cases.

Some foreign analogues of KT3102 were listed in the table. Also, this device can be replaced with domestic counterparts KT611 and KT660 or with such foreign counterparts as BC547 and BC548.